technical data npn power silicon transistor qualified per mil - prf - 19500/464 devices qualified level 2n5685 2n5686 jan jantx jantxv maximum ratings ratings symbol 2n5685 2n5686 units collector - emitter voltage v ceo 60 80 vdc collector - bas e voltage v cbo 60 80 vdc emitter - base voltage v ebo 5.0 vdc base current i b 15 adc collector current i c 50 adc total power dissipation @ t c = +25 0 c (1) @ t c = +100 0 c (1) p t 300 171 w w operating & storage junction temperature range t j , t stg - 55 to +200 0 c thermal characteristics characteristics symbol max. unit thermal resistance, junction - to - case r q jc .0584 0 c/w 1) derate linearly 1.715 w/ 0 c between t c = 25 0 c and t c = 200 0 c to - 3* (to - 204aa) *see app endix a for package outline electrical characteristics (t c = 25 0 c unless otherwise noted) characteristics symbol min. max. unit off characteristics collector - emitter breakdown voltage i c = 100 madc 2n5685 2n5686 v (br) ceo 60 80 vdc collector - em itter cutoff current v ce = 30 vdc 2n5685 v ce = 40 vdc 2n5686 i ceo 500 500 m adc collector - emitter cutoff current v ce = 60 vdc, v be = 1.5 vdc 2n5685 v ce = 80 vdc, v be = 1.5 vdc 2n5686 i cex 500 500 m adc collector - base cutoff current v cb = 60 vdc 2n5685 v cb = 80 vdc 2n5686 i cbo 2.0 2.0 madc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 1 of 2
2n5685, 2n5686 jan series el ectrical characteristics (con?t) characteristics symbol min. max. unit emitter - base cutoff current v eb = 5.0 vdc i ebo 1.0 madc on characteristics (2) forward - current transfer ratio i c = 5.0 adc, v ce = 2.0 vdc i c = 25 adc, v ce = 2.0 vd c i c = 50 adc, v ce = 5.0 vdc h fe 30 15 5.0 60 collector - emitter saturation voltage i c = 25 adc, i b = 2.5 adc i c = 50 adc, i b = 10 adc v ce(sat) 1.0 5.0 vdc base - emitter saturation voltage i c = 25 adc, i b = 2.5 adc v be(sat) 2.0 vdc base - emitter voltage i c = 25 adc, v ce = 2.0 vdc v be(on) 2.0 vdc dynamic characteristics magnitude of common emitter small - signal short - circuit forward current transfer ratio i c = 5.0 adc, v ce = 10 vdc, f = 1.0 mhz ? h fe ? 2.0 20 small - signal short - circuit forward current transfer ratio i c = 10 adc, v ce = 5.0 vdc, f = 1.0 khz h fe 15 output capacitance v cb = 10 vdc, i e = 0, 0.1 mhz f 1.0 mhz c obo 1200 pf switching characteristics turn - on time v cc = 30 v dc; i c = 25 adc; i b1 = 2.5 adc t on 1.5 m s turn - off time v cc = 30 vdc; i c = 25 adc; i b1 = - i b2 = 2.5 adc t off 3.0 m s safe operating area dc tests t c = +25 0 c, 1 cycle, t = 1.0 s test 1 v ce = 6.0 vdc, i c = 50 adc test 2 v ce = 30 vdc, i c = 10 adc test 3 v ce = 50 vdc, i c = 560 madc 2n5685 v ce = 60 vdc, i c = 640 madc 2n5686 (2) pulse test: pulse width = 300 m s, duty cycle 2.0%. 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 1 20101 page 2 of 2
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